:? :?:? :?:::?:?:?:?:?:?:?:?: @?:?:?:?:?::?:?:w:?:?::o:::?:?::?:? @?:?:?:?:?:::?: @?::?:?::?::?:w:?:1::?:?::?:?:w::?:?::?:?: @?:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: @?:::?:w:o:?:?:?::?:::?:?::?:?:w @?:?:::o:::? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:e:?:? ::?:?:? :?:?::? ::?:?:? ::?:?::?::?:w:::?:o:?::?:?:?:?:?:?:?:?:1::?:?:? :? >? :?:?: :? :? :?:? :?:::?:?:?:?:?:?:?:?: :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:? @?:?:?:?:o:?:::o:?:?:w:o:?:?::?:o:?:?::::?::o: :?:?:?:?:?=? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:?:?:?::?::?:? :::?:? :?:e:?:? ::?:?:? :?:?::? :a:?:?:?:?:?:w::?:?:?::?:?:?:?:a :?::?::?:?::?:::o:?:w:1::?:?:a:?:?:?:?:w::?:?:?:?:?:? :?:-:?:: :?:?:?:?:?:?:?? :w:?:?::w:?:?:?:?:?:?:w::?::::?:?:?:o:?:w::?:?::?:?:? :?:?:?:?:?::?:::?:w::?:?::?:?:?:w:?::?::?:w:?::?:?:?:w:?::?::?:?:?:w:1:e:w:::?:o:?::?:?:w:?:?:?:?:?::?:?:::?:? :w :?:?:?:w:? :? :?:? @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: :?:::?:?:?:?:?:?:?:?: :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:? h is product has been designed and qualified for the consumer market. applications or uses as critical o mponents in life support devices or systems are not authorized. aos does not assume any liability ari s ut of such applications or uses of its products. aos reserves the right to improve product design, u nctions and reliability without notice. 0 5 10 15 20 0.00 1.00 2.00 3.00 4.00 5.00 -v ds (volts) figure 1: on-region characteristics -id (a) v gs =-3v -3.5v -4v -10v -4.5v -5v 0 2 4 6 8 10 01234 -v gs(volts) figure 2: transfer characteristics -id(a) 25c 125c v ds =-5v 20 40 60 80 100 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage rds(on) (m ) v gs =-4.5v v gs =-10v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -is (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-4.5v 20 40 60 80 100 120 140 160 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage rds(on) (m ) i d =-5a 25c 125c i d =-5a -2.5v -6v
:? :?:? :?:::?:?:?:?:?:?:?:?: :a::?:?:?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:? his product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arisi n o ut of such applications or uses of its products. aos reserves the right to improve product design, unctions and reliability without notice. 0 1 2 3 4 5 6 7 8 9 10 0246810121416 -q g (nc) figure 7: gate-charge characteristics -vgs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient t hermal resistance 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -id (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-6a single pulse d=t on /t t j , pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s
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